Type/Dopant
| N-Type/Si | P-Type/Zn | | Dopant | As, Sb | Ga | | Growth MethodCZ | CZ | | Diameter | 2", 3", 4", 6" | | Orientation | (100)±0.5° | | Thickness (μm) | 175-500um±25um | | OF/IF | US EJ | | Resistivity (ohm-cm) | 0.005-30 | 0.005-0.4 | | Etch Pitch Density (/cm2) | <300 | <300 | | TTV [P/P] (μm) | <15 | | TTV [P/E] (μm) | <25 | | Warp (μm) | <25 | | Surface Finished | P/P, P/E, E/E |
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